Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ZXMP7A17GQTA
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RFQ
3,499
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Diodes Incorporated MOSFET P-CH 70V 2.6A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) P-Channel - 70V 2.6A (Ta) 160 mOhm @ 2.1A, 10V 1V @ 250µA 18nC @ 10V 635pF @ 40V 4.5V, 10V ±20V
ZXMP7A17GTA
RFQ
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RFQ
3,510
In-stock
Diodes Incorporated MOSFET P-CH 70V 3.7A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) P-Channel - 70V 2.6A (Ta) 160 mOhm @ 2.1A, 10V 1V @ 250µA 18nC @ 10V 635pF @ 40V 4.5V, 10V ±20V
NCV8440ASTT1G
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RFQ
1,725
In-stock
ON Semiconductor MOSFET N-CH 59V 2.6A SOT-223-4 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.69W (Ta) N-Channel - 59V 2.6A (Ta) 110 mOhm @ 2.6A, 10V 1.9V @ 100µA 4.5nC @ 4.5V 155pF @ 35V 3.5V, 10V ±15V
ZXMP10A18GTA
RFQ
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RFQ
3,266
In-stock
Diodes Incorporated MOSFET P-CH 100V 2.6A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) P-Channel - 100V 2.6A (Ta) 150 mOhm @ 2.8A, 10V 4V @ 250µA 26.9nC @ 10V 1055pF @ 50V 6V, 10V ±20V
HUFA75307T3ST
RFQ
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RFQ
1,634
In-stock
ON Semiconductor MOSFET N-CH 55V 2.6A SOT-223-4 Automotive, AEC-Q101, UltraFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 1.1W (Ta) N-Channel - 55V 2.6A (Ta) 90 mOhm @ 2.6A, 10V 4V @ 250µA 17nC @ 20V 250pF @ 25V 10V ±20V
NVF2955T1G
RFQ
VIEW
RFQ
2,052
In-stock
ON Semiconductor MOSFET P-CH 60V 2.6A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 (TO-261) 1W (Ta) P-Channel - 60V 2.6A (Ta) 170 mOhm @ 750mA, 10V 4V @ 1mA 14.3nC @ 10V 492pF @ 25V 10V ±20V
IRFL4315TRPBF
RFQ
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RFQ
2,821
In-stock
Infineon Technologies MOSFET N-CH 150V 2.6A SOT223 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.8W (Ta) N-Channel - 150V 2.6A (Ta) 185 mOhm @ 1.6A, 10V 5V @ 250µA 19nC @ 10V 420pF @ 25V 10V ±30V