Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NDT452AP
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2,112
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ON Semiconductor MOSFET P-CH 30V 5A SOT-223-4 - Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) P-Channel 30V 5A (Ta) 65 mOhm @ 5A, 10V 2.8V @ 250µA 30nC @ 10V 690pF @ 15V 4.5V, 10V ±20V
ZXMN4A06GTA
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2,000
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Diodes Incorporated MOSFET N-CH 40V 5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel 40V 5A (Ta) 50 mOhm @ 4.5A, 10V 1V @ 250µA 18.2nC @ 10V 770pF @ 40V 4.5V, 10V ±20V
TSM05N03CW RPG
RFQ
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RFQ
3,981
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 30V 5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3W (Ta) N-Channel 30V 5A (Ta) 60 mOhm @ 5A, 10V 3V @ 250µA 7nC @ 5V 555pF @ 15V 4.5V, 10V ±20V
FDT457N
RFQ
VIEW
RFQ
3,358
In-stock
ON Semiconductor MOSFET N-CH 30V 5A SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 3W (Ta) N-Channel 30V 5A (Ta) 60 mOhm @ 5A, 10V 3V @ 250µA 5.9nC @ 5V 235pF @ 15V 4.5V, 10V ±20V