Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI3434DV-T1-E3
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Vishay Siliconix MOSFET N-CH 30V 4.6A 6-TSOP TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.14W (Ta) N-Channel 30V 4.6A (Ta) 34 mOhm @ 6.1A, 4.5V 600mV @ 1mA (Min) 12nC @ 4.5V - 2.5V, 4.5V ±12V
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ON Semiconductor MOSFET N-CH 30V 4.6A SOT23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SOT-23-6 960mW (Ta) N-Channel 30V 4.6A (Ta) 31 mOhm @ 4.6A, 10V 3V @ 250µA 7.9nC @ 10V 535pF @ 15V 4.5V, 10V ±20V