Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF5800TRPBF
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2,186
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Infineon Technologies MOSFET P-CH 30V 4A 6-TSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 30V 4A (Ta) 85 mOhm @ 4A, 10V 1V @ 250µA 17nC @ 10V 535pF @ 25V 4.5V, 10V ±20V
SI3481DV-T1-E3
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888
In-stock
Vishay Siliconix MOSFET P-CH 30V 4A 6-TSOP TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.14W (Ta) P-Channel - 30V 4A (Ta) 48 mOhm @ 5.3A, 10V 3V @ 250µA 25nC @ 10V - 4.5V, 10V ±20V
FDC658AP
RFQ
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RFQ
3,899
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ON Semiconductor MOSFET P-CH 30V 4A SSOT6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) P-Channel - 30V 4A (Ta) 50 mOhm @ 4A, 10V 3V @ 250µA 8.1nC @ 5V 470pF @ 15V 4.5V, 10V ±25V
SI3457DV
RFQ
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RFQ
3,586
In-stock
ON Semiconductor MOSFET P-CH 30V 4A SSOT-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) P-Channel - 30V 4A (Ta) 50 mOhm @ 4A, 10V 3V @ 250µA 8.1nC @ 5V 470pF @ 25V 4.5V, 10V ±25V
FDC658P
RFQ
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RFQ
3,388
In-stock
ON Semiconductor MOSFET P-CH 30V 4A SSOT-6 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) P-Channel - 30V 4A (Ta) 50 mOhm @ 4A, 10V 3V @ 250µA 12nC @ 5V 750pF @ 15V 10V ±20V