- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 100 mOhm @ 700mA, 4.5V (1)
- 127 mOhm @ 1A, 4V (1)
- 130 mOhm @ 2.8A, 4.5V (1)
- 165 mOhm @ 1A, 4.5V (1)
- 18 mOhm @ 5.8A, 4.5V (1)
- 200 mOhm @ 1.3A, 4.5V (1)
- 31 mOhm @ 4A, 4.5V (1)
- 32 mOhm @ 3.3A, 4.5V (1)
- 36 mOhm @ 2A, 4.5V (1)
- 40 mOhm @ 4.1A, 4.5V (2)
- 400 mOhm @ 430mA, 4.5V (1)
- 400 mOhm @ 600mA, 4.5V (1)
- 46 mOhm @ 3A, 4.5V (1)
- 47 mOhm @ 2A, 4.5V (1)
- 50 mOhm @ 4.3A, 4.5V (1)
- 51 mOhm @ 4A, 4.5V (1)
- 52 mOhm @ 3.5A, 4.5V (1)
- 55 mOhm @ 4A, 4.5V (1)
- 60 mOhm @ 3.6A, 4.5V (1)
- 650 mOhm @ 580mA, 4.5V (1)
- 76 mOhm @ 2A, 4.5V (1)
- 85 mOhm @ 3.6A, 4.5V (2)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 1.65nC @ 4.5V (1)
- 10nC @ 4.5V (2)
- 11nC @ 4.5V (1)
- 15nC @ 4.5V (4)
- 15nC @ 5V (1)
- 19nC @ 4.5V (1)
- 2.2nC @ 4.5V (1)
- 2nC @ 4.5V (1)
- 3.8nC @ 4.5V (1)
- 3.9nC @ 4.5V (1)
- 4.5nC @ 4.5V (1)
- 4.8nC @ 4.5V (1)
- 5.4nC @ 4.5V (1)
- 6.1nC @ 4V (1)
- 6nC @ 4.5V (1)
- 7.4nC @ 4.5V (1)
- 8.1nC @ 4.5V (1)
- 8.5nC @ 4.5V (1)
- 9.3nC @ 4.5V (1)
- 9nC @ 4.5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1170pF @ 10V (1)
- 1225pF @ 6V (1)
- 1245pF @ 4V (1)
- 183pF @ 10V (1)
- 200pF @ 9.6V (1)
- 230pF @ 10V (2)
- 300pF @ 10V (1)
- 335pF @ 10V (1)
- 360pF @ 10V (1)
- 445pF @ 30V (1)
- 447pF @ 6V (1)
- 460pF @ 20V (1)
- 470pF @ 10V (1)
- 510pF @ 10V (1)
- 640pF @ 10V (1)
- 640pF @ 6V (1)
- 670pF @ 10V (1)
- 740pF @ 4V (2)
- 830pF @ 10V (1)
- 83pF @ 10V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
24 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
1,251
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,320
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 2.8A SOT23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 900mW (Ta) | P-Channel | 20V | 2.8A (Tc) | 130 mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 447pF @ 6V | 2.5V, 4.5V | ±8V | ||||
VIEW |
3,267
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 2A SOT-23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 310mW (Ta), 2.17W (Tc) | N-Channel | 20V | 2.2A (Ta) | 76 mOhm @ 2A, 4.5V | 1V @ 250µA | 3.9nC @ 4.5V | 183pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,536
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 3.3A SOT-23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 380mW (Ta) | N-Channel | 20V | 3.3A (Ta) | 32 mOhm @ 3.3A, 4.5V | 1V @ 270µA | 9nC @ 4.5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
3,539
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 1A TO-236AB | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 325mW (Ta), 1.14W (Tc) | N-Channel | 20V | 1A (Ta) | 165 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.65nC @ 4.5V | 83pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
3,540
In-stock
|
Vishay Siliconix | MOSFET P-CH 8V 3.5A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.25W (Ta) | P-Channel | 8V | 3.5A (Ta) | 52 mOhm @ 3.5A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 1245pF @ 4V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,699
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V 2.1A SOT23-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | N-Channel | 20V | 2.1A (Ta) | 60 mOhm @ 3.6A, 4.5V | 1.2V @ 50µA | 10nC @ 4.5V | 300pF @ 10V | 2.5V, 4.5V | ±8V | ||||
VIEW |
2,009
In-stock
|
Vishay Siliconix | MOSFET P-CH 12V 3.2A SOT23 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 750mW (Ta) | P-Channel | 12V | 3.2A (Ta) | 51 mOhm @ 4A, 4.5V | 450mV @ 250µA (Min) | 15nC @ 4.5V | 1225pF @ 6V | 1.8V, 4.5V | ±8V | ||||
VIEW |
2,603
In-stock
|
Vishay Siliconix | MOSFET P-CH 8V 5.4A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 960mW (Ta), 1.7W (Tc) | P-Channel | 8V | 5.4A (Tc) | 40 mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 740pF @ 4V | 1.8V, 4.5V | ±8V | ||||
VIEW |
2,256
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 5.7A SOT-23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | 20V | 5.7A (Tc) | 36 mOhm @ 2A, 4.5V | 700mV @ 1mA | 7.4nC @ 4.5V | 460pF @ 20V | 1.8V, 4.5V | ±8V | ||||
VIEW |
2,125
In-stock
|
Vishay Siliconix | MOSFET P-CH 8V 5.4A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 960mW (Ta), 1.7W (Tc) | P-Channel | 8V | 5.4A (Tc) | 40 mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 740pF @ 4V | 1.8V, 4.5V | ±8V | ||||
VIEW |
2,780
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 4.9A SOT-23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | 30V | 4.9A (Tc) | 47 mOhm @ 2A, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | 1.8V, 4.5V | ±8V | ||||
VIEW |
3,576
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 2.5A SOT23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 830mW (Tc) | N-Channel | 20V | 2.5A (Tc) | 85 mOhm @ 3.6A, 4.5V | 650mV @ 1mA | 10nC @ 4.5V | 230pF @ 10V | 2.5V, 4.5V | ±8V | ||||
VIEW |
3,895
In-stock
|
Vishay Siliconix | MOSFET N-CH 20V SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 350mW (Ta) | N-Channel | 20V | - | 400 mOhm @ 600mA, 4.5V | 1V @ 50µA | 2nC @ 4.5V | - | 2.5V, 4.5V | ±8V | ||||
VIEW |
2,712
In-stock
|
NXP USA Inc. | MOSFET P-CH 12V 0.75A SOT-23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 417mW (Ta) | P-Channel | 12V | 750mA (Ta) | 400 mOhm @ 430mA, 4.5V | 680mV @ 1mA | 3.8nC @ 4.5V | 200pF @ 9.6V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,106
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 1.2A SSOT3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | P-Channel | 20V | 1.2A (Ta) | 200 mOhm @ 1.3A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 360pF @ 10V | 2.7V, 4.5V | ±8V | ||||
VIEW |
3,231
In-stock
|
Infineon Technologies | MOSFET P-CH 12V 4.3A SOT-23 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.3W (Ta) | P-Channel | 12V | 4.3A (Ta) | 50 mOhm @ 4.3A, 4.5V | 950mV @ 250µA | 15nC @ 5V | 830pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,951
In-stock
|
NXP USA Inc. | MOSFET N-CH 20V 3.76A SOT23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.92W (Tc) | N-Channel | 20V | 3.76A (Tc) | 85 mOhm @ 3.6A, 4.5V | 650mV @ 1mA | 5.4nC @ 4.5V | 230pF @ 10V | 2.5V, 4.5V | ±8V | ||||
VIEW |
1,998
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 5A (Ta) | 31 mOhm @ 4A, 4.5V | 1V @ 1mA | 19nC @ 4.5V | 1170pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,983
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.2A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 5.2A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,151
In-stock
|
Vishay Siliconix | MOSFET P-CH 20V 0.58A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 350mW (Ta) | P-Channel | 20V | - | 650 mOhm @ 580mA, 4.5V | 1V @ 50µA | 2.2nC @ 4.5V | - | 2.5V, 4.5V | ±8V | ||||
VIEW |
1,549
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.3A TSM | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 2.3A (Ta) | 127 mOhm @ 1A, 4V | - | 6.1nC @ 4V | 335pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
2,850
In-stock
|
STMicroelectronics | MOSFET P-CH 20V 1.4A SOT-23 | STripFET™ H7 | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 350mW (Tc) | P-Channel | 20V | 1.4A (Ta) | 100 mOhm @ 700mA, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 510pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
601
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 4A SOT23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 900mW (Ta) | P-Channel | 20V | 4A (Ta) | 55 mOhm @ 4A, 4.5V | 1.4V @ 250µA | 6nC @ 4.5V | 640pF @ 6V | 2.5V, 4.5V | ±8V |