Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSS138LT1
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3,288
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ON Semiconductor MOSFET N-CH 50V 200MA SOT-23 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 225mW (Ta) N-Channel - 50V 200mA (Ta) 3.5 Ohm @ 200mA, 5V 1.5V @ 1mA - 50pF @ 25V 5V ±20V
ZXM41N10FTA
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842
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Diodes Incorporated MOSFET N-CH 100V 170MA SOT23-3 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) - Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 360mW (Ta) N-Channel - 100V 170mA (Ta) 8 Ohm @ 150mA, 4.5V 1.5V @ 1mA - 25pF @ 25V 3V, 4.5V ±40V
PMV31XN,215
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RFQ
3,692
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NXP USA Inc. MOSFET N-CH 20V 5.9A SOT-23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 280mW (Tj) N-Channel - 20V 5.9A (Tc) 37 mOhm @ 1.5A, 4.5V 1.5V @ 1mA 5.8nC @ 4.5V 410pF @ 20V 2.5V, 4.5V ±12V