Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NXP USA Inc. MOSFET N-CH 20V 5.8A SOT23 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 510mW (Ta) N-Channel - 20V 5.8A (Ta) 18 mOhm @ 5.8A, 4.5V 1V @ 250µA 11nC @ 4.5V 670pF @ 10V 1.8V, 4.5V ±8V
PMV65UN,215
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NXP USA Inc. MOSFET N-CH 20V 2A SOT-23 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 310mW (Ta), 2.17W (Tc) N-Channel - 20V 2.2A (Ta) 76 mOhm @ 2A, 4.5V 1V @ 250µA 3.9nC @ 4.5V 183pF @ 10V 1.8V, 4.5V ±8V
PMV170UN,215
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NXP USA Inc. MOSFET N-CH 20V 1A TO-236AB - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 325mW (Ta), 1.14W (Tc) N-Channel - 20V 1A (Ta) 165 mOhm @ 1A, 4.5V 1V @ 250µA 1.65nC @ 4.5V 83pF @ 10V 1.8V, 4.5V ±8V
NDS336P
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ON Semiconductor MOSFET P-CH 20V 1.2A SSOT3 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SuperSOT-3 500mW (Ta) P-Channel - 20V 1.2A (Ta) 200 mOhm @ 1.3A, 4.5V 1V @ 250µA 8.5nC @ 4.5V 360pF @ 10V 2.7V, 4.5V ±8V
IRLML5103TR
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Infineon Technologies MOSFET P-CH 30V 760MA SOT-23 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 540mW (Ta) P-Channel - 30V 760mA (Ta) 600 mOhm @ 600mA, 10V 1V @ 250µA 5.1nC @ 10V 75pF @ 25V 4.5V, 10V ±20V
IRLML2803TR
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Infineon Technologies MOSFET N-CH 30V 1.2A SOT-23 HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 Micro3™/SOT-23 540mW (Ta) N-Channel - 30V 1.2A (Ta) 250 mOhm @ 910mA, 10V 1V @ 250µA 5nC @ 10V 85pF @ 25V 4.5V, 10V ±20V
DMN2170U-7
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1,357
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Diodes Incorporated MOSFET N-CH 20V 2.3A SOT23-3 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 600mW (Ta) N-Channel - 20V 2.3A (Ta) 70 mOhm @ 3A, 4.5V 1V @ 250µA - 217pF @ 10V 1.5V, 4.5V ±12V
NDS335N
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ON Semiconductor MOSFET N-CH 20V 1.7A SSOT3 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SuperSOT-3 500mW (Ta) N-Channel - 20V 1.7A (Ta) 110 mOhm @ 1.7A, 4.5V 1V @ 250µA 9nC @ 4.5V 240pF @ 10V 2.7V, 4.5V 8V
STR1P2UH7
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STMicroelectronics MOSFET P-CH 20V 1.4A SOT-23 STripFET™ H7 Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 350mW (Tc) P-Channel - 20V 1.4A (Ta) 100 mOhm @ 700mA, 4.5V 1V @ 250µA 4.8nC @ 4.5V 510pF @ 10V 1.8V, 4.5V ±8V