Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSN20,215
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RFQ
1,696
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Nexperia USA Inc. MOSFET N-CH 50V 173MA SOT-23 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 830mW (Tc) N-Channel - 50V 173mA (Ta) 15 Ohm @ 100mA, 10V 1V @ 1mA - 25pF @ 10V 5V, 10V ±20V
SSM3J307T(TE85L,F)
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RFQ
1,998
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A TSM U-MOSV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 5A (Ta) 31 mOhm @ 4A, 4.5V 1V @ 1mA 19nC @ 4.5V 1170pF @ 10V 1.5V, 4.5V ±8V
SSM3K316T(TE85L,F)
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RFQ
3,588
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 4A TSM - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 30V 4A (Ta) 53 mOhm @ 3A, 10V 1V @ 1mA 4.3nC @ 4V 270pF @ 10V 1.8V, 10V ±12V
SSM3J321T(TE85L,F)
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RFQ
3,983
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5.2A TSM U-MOSV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 5.2A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 1.5V, 4.5V ±8V