- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,508
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 5A S-MOS | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 20V | 5A (Ta) | 28 mOhm @ 4A, 4V | - | 14.8nC @ 4V | 1120pF @ 10V | 1.5V, 4V | ±10V | ||||
VIEW |
1,041
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.7A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 20V | 4.7A (Ta) | 31 mOhm @ 4A, 4V | - | - | 1020pF @ 10V | 1.8V, 4V | ±12V | ||||
VIEW |
3,678
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 3A (Ta) | 71 mOhm @ 2A, 4V | - | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 4V | ±12V | ||||
VIEW |
2,062
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.5A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 20V | 3.5A (Ta) | 56 mOhm @ 2A, 4V | - | 4.8nC @ 4V | 320pF @ 10V | 1.8V, 4V | ±12V | ||||
VIEW |
608
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3.2A TSM | π-MOSVI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 1.25W (Ta) | N-Channel | 30V | 3.2A (Ta) | 120 mOhm @ 1.6A, 4V | - | - | 152pF @ 10V | 2.5V, 4V | ±10V | ||||
VIEW |
3,523
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | U-MOSII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.7A (Ta) | 85 mOhm @ 1.35A, 10V | - | - | 413pF @ 15V | 4V, 10V | ±20V | ||||
VIEW |
1,998
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 5A (Ta) | 31 mOhm @ 4A, 4.5V | 1V @ 1mA | 19nC @ 4.5V | 1170pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
2,584
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.9A TSM | π-MOSVII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 2.9A (Ta) | 83 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
3,588
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | ||||
VIEW |
1,375
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A TSM | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 30V | 6A (Ta) | 27.6 mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,983
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.2A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 5.2A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,549
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.3A TSM | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 2.3A (Ta) | 127 mOhm @ 1A, 4V | - | 6.1nC @ 4V | 335pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
3,412
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.4A (Ta) | 117 mOhm @ 1A, 10V | - | 2.5nC @ 15V | 280pF @ 15V | 4V, 10V | ±20V |