- Series :
- Part Status :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,326
In-stock
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Infineon Technologies | MOSFET N-CH 25V 5.8A SOT23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | 25V | 5.8A (Ta) | 24 mOhm @ 5.8A, 10V | 2.35V @ 10µA | 5.4nC @ 10V | 430pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,666
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 30V 5.8A SOT23 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 750mW (Ta) | N-Channel | 30V | 5.8A (Ta) | 30 mOhm @ 5.8A, 10V | 3V @ 250µA | 13.8nC @ 10V | 400.96pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
608
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 5.8A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 720mW (Ta) | N-Channel | 30V | 5.8A (Ta) | 26.5 mOhm @ 5.8A, 10V | 1.4V @ 250µA | 20nC @ 10V | 860pF @ 15V | 2.5V, 10V | ±12V |