Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RQ5C035BCTCL
RFQ
VIEW
RFQ
2,117
In-stock
Rohm Semiconductor MOSFET P-CHANNEL 20V 3.5A TSMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Tc) P-Channel 20V 3.5A (Ta) 59 mOhm @ 3.5A, 4.5V 1.2V @ 1mA 6.5nC @ 4.5V 460pF @ 10V 4.5V ±8V
RZR020P01TL
RFQ
VIEW
RFQ
3,296
In-stock
Rohm Semiconductor MOSFET P-CH 12V 2A TSMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Ta) P-Channel 12V 2A (Ta) 105 mOhm @ 2A, 4.5V 1V @ 1mA 6.5nC @ 4.5V 770pF @ 6V 1.5V, 4.5V ±10V