Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM052N06PQ56 RLG
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1,935
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Taiwan Semiconductor Corporation MOSFET N-CH 60V 100A 8PDFN - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 83W (Tc) N-Channel - 60V 100A (Tc) 5.2 mOhm @ 20A, 10V 4V @ 250µA 50nC @ 10V 3686pF @ 30V 10V ±25V
IRFHM9331TR2PBF
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3,533
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Infineon Technologies MOSFET P-CH 30V 11A 3X3 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (3x3) 2.8W (Ta) P-Channel - 30V 11A (Ta), 24A (Tc) 10 mOhm @ 11A, 20V 2.4V @ 25µA 48nC @ 10V 1543pF @ 25V 10V, 20V ±25V
BSC200P03LSGAUMA1
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2,563
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Infineon Technologies MOSFET P-CH 30V 12.5A TDSON-8 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 63W (Tc) P-Channel - 30V 9.9A (Ta), 12.5A (Tc) 20 mOhm @ 12.5A, 10V 2.2V @ 100µA 48.5nC @ 10V 2430pF @ 15V 10V ±25V