Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSC097N06NSTATMA1
RFQ
VIEW
RFQ
3,649
In-stock
Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 3W (Ta), 43W (Tc) N-Channel - 60V 13A (Ta), 48A (Tc) 9.7 mOhm @ 40A, 10V 3.3V @ 14µA 15nC @ 10V 1075pF @ 30V 6V, 10V ±20V
BSC097N06NSATMA1
RFQ
VIEW
RFQ
2,823
In-stock
Infineon Technologies MOSFET N-CH 60V 46A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 36W (Tc) N-Channel - 60V 46A (Tc) 9.7 mOhm @ 40A, 10V 3.3V @ 14µA 15nC @ 10V 1075pF @ 30V 6V, 10V ±20V
BSZ100N06NSATMA1
RFQ
VIEW
RFQ
3,434
In-stock
Infineon Technologies MOSFET N-CH 60V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 36W (Tc) N-Channel - 60V 40A (Tc) 10 mOhm @ 20A, 10V 3.3V @ 14µA 15nC @ 10V 1075pF @ 30V 6V, 10V ±20V
FDMS86252
RFQ
VIEW
RFQ
1,279
In-stock
ON Semiconductor MOSFET N-CH 150V 16A POWER56 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 69W (Tc) N-Channel - 150V 4.6A (Ta), 16A (Tc) 51 mOhm @ 4.6A, 10V 4V @ 250µA 15nC @ 10V 905pF @ 75V 6V, 10V ±20V