Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSZ086P03NS3EGATMA1
RFQ
VIEW
RFQ
1,023
In-stock
Infineon Technologies MOSFET P-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 69W (Tc) P-Channel - 30V 13.5A (Ta), 40A (Tc) 8.6 mOhm @ 20A, 10V 3.1V @ 105µA 57.5nC @ 10V 4785pF @ 15V 6V, 10V ±25V
BSZ120P03NS3GATMA1
RFQ
VIEW
RFQ
1,755
In-stock
Infineon Technologies MOSFET P-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 52W (Tc) P-Channel - 30V 11A (Ta), 40A (Tc) 12 mOhm @ 20A, 10V 3.1V @ 73µA 45nC @ 10V 3360pF @ 15V 6V, 10V ±25V
BSZ180P03NS3EGATMA1
RFQ
VIEW
RFQ
959
In-stock
Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 40W (Tc) P-Channel - 30V 9A (Ta), 39.5A (Tc) 18 mOhm @ 20A, 10V 3.1V @ 48µA 30nC @ 10V 2220pF @ 15V 6V, 10V ±25V
BSC030P03NS3GAUMA1
RFQ
VIEW
RFQ
3,350
In-stock
Infineon Technologies MOSFET P-CH 30V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) P-Channel - 30V 25.4A (Ta), 100A (Tc) 3 mOhm @ 50A, 10V 3.1V @ 345µA 186nC @ 10V 14000pF @ 15V 6V, 10V ±25V
BSC060P03NS3EGATMA1
RFQ
VIEW
RFQ
1,496
In-stock
Infineon Technologies MOSFET P-CH 30V 17.7A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 83W (Tc) P-Channel - 30V 17.7A (Ta), 100A (Tc) 6 mOhm @ 50A, 10V 3.1V @ 150µA 81nC @ 10V 6020pF @ 15V 6V, 10V ±25V
BSC084P03NS3GATMA1
RFQ
VIEW
RFQ
1,575
In-stock
Infineon Technologies MOSFET P-CH 30V 14.9A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) P-Channel - 30V 14.9A (Ta), 78.6A (Tc) 8.4 mOhm @ 50A, 10V 3.1V @ 105µA 58nC @ 10V 4785pF @ 15V 6V, 10V ±25V