Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSZ110N08NS5ATMA1
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Infineon Technologies MOSFET N-CH 80V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 50W (Tc) N-Channel - 80V 40A (Tc) 11 mOhm @ 20A, 10V 3.8V @ 22µA 18.5nC @ 10V 1300pF @ 40V 6V, 10V ±20V
BSZ042N06NSATMA1
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3,223
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Infineon Technologies MOSFET N-CH 60V 19A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel - 60V 17A (Ta), 40A (Tc) 4.2 mOhm @ 20A, 10V 2.8V @ 36µA 27nC @ 10V 2000pF @ 30V 6V, 10V ±20V
BSZ097N10NS5ATMA1
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3,778
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Infineon Technologies MOSFET N-CH 100V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel - 100V 8A (Ta), 40A (Tc) 9.7 mOhm @ 20A, 10V 3.8V @ 36µA 28nC @ 10V 2080pF @ 50V 6V, 10V ±20V
BSZ100N06NSATMA1
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3,434
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Infineon Technologies MOSFET N-CH 60V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 36W (Tc) N-Channel - 60V 40A (Tc) 10 mOhm @ 20A, 10V 3.3V @ 14µA 15nC @ 10V 1075pF @ 30V 6V, 10V ±20V
BSZ075N08NS5ATMA1
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1,518
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Infineon Technologies MOSFET N-CH 80V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 69W (Tc) N-Channel - 80V 40A (Tc) 7.5 mOhm @ 20A, 10V 3.8V @ 36µA 29.5nC @ 10V 2080pF @ 40V 6V, 10V ±20V
BSZ068N06NSATMA1
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1,464
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Infineon Technologies MOSFET N-CH 60V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 46W (Tc) N-Channel - 60V 40A (Tc) 6.8 mOhm @ 20A, 10V 3.3V @ 20µA 21nC @ 10V 1500pF @ 30V 6V, 10V ±20V