- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
.jpg)
|
VIEW |
2,539
In-stock
|
Texas Instruments | MOSFET P-CH 20V 60A 8-SON | NexFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON-CLIP (3.3x3.3) | 2.8W (Ta) | P-Channel | - | 20V | 14A (Ta), 60A (Tc) | 11.7 mOhm @ 10A, 4.5V | 1.2V @ 250µA | 12.3nC @ 4.5V | 1400pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,661
In-stock
|
Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
