Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMP22M2UPS-13
RFQ
VIEW
RFQ
2,002
In-stock
Diodes Incorporated MOSFET P-CH 20V POWERDI5060-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.3W (Ta) P-Channel - 20V 60A (Tc) 2.5 mOhm @ 25A, 10V 1.4V @ 250µA 476nC @ 10V 12826pF @ 10V 2.5V, 10V ±12V
DMP22M2UPS-13
RFQ
VIEW
RFQ
2,987
In-stock
Diodes Incorporated MOSFET P-CH 20V POWERDI5060-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.3W (Ta) P-Channel - 20V 60A (Tc) 2.5 mOhm @ 25A, 10V 1.4V @ 250µA 476nC @ 10V 12826pF @ 10V 2.5V, 10V ±12V
DMP2003UPS-13
RFQ
VIEW
RFQ
822
In-stock
Diodes Incorporated MOSFETP-CHAN 20V POWERDI5060-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 1.4W P-Channel - 20V 150A (Tc) 2.2 mOhm @ 25A, 10V 1.4V @ 250µA 177nC @ 10V 8352pF @ 10V 2.5V, 10V ±12V
DMP2002UPS-13
RFQ
VIEW
RFQ
2,566
In-stock
Diodes Incorporated MOSFET P-CH 20V POWERDI5060-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.3W (Ta) P-Channel - 20V 60A (Tc) 1.9 mOhm @ 25A, 10V 1.4V @ 250µA 585nC @ 10V 12826pF @ 10V 2.5V, 10V ±12V
IRLHM620TRPBF
RFQ
VIEW
RFQ
2,488
In-stock
Infineon Technologies MOSFET N-CH 20V 26A PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (3x3) 2.7W (Ta), 37W (Tc) N-Channel - 20V 26A (Ta), 40A (Tc) 2.5 mOhm @ 20A, 4.5V 1.1V @ 50µA 78nC @ 4.5V 3620pF @ 10V 2.5V, 10V ±12V