Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM055N03PQ56 RLG
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 80A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 74W (Tc) N-Channel 30V 80A (Tc) 5.5 mOhm @ 20A, 10V 2.5V @ 250µA 11.1nC @ 4.5V 1160pF @ 25V 4.5V, 10V ±20V
TSM055N03EPQ56 RLG
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Taiwan Semiconductor Corporation MOSFET N-CH 30V 80A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 74W (Tc) N-Channel 30V 80A (Tc) 5.5 mOhm @ 20A, 10V 2.5V @ 250µA 11.1nC @ 4.5V 1210pF @ 25V 4.5V, 10V ±20V