Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC035N10NS5ATMA1
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Infineon Technologies MOSFET N-CH 100V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 156W (Tc) N-Channel - 100V 100A (Tc) 3.5 mOhm @ 50A, 10V 3.8V @ 115µA 87nC @ 10V 6500pF @ 50V 6V, 10V ±20V
BSC010N04LSIATMA1
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1,645
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Infineon Technologies MOSFET N-CH 40V 37A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 2.5W (Ta), 139W (Tc) N-Channel Schottky Diode (Body) 40V 37A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2V @ 250µA 87nC @ 10V 6200pF @ 20V 4.5V, 10V ±20V
BSC079N10NSGATMA1
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3,086
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Infineon Technologies MOSFET N-CH 100V 100A TDSON-8 OptiMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 13.4A (Ta), 100A (Tc) 7.9 mOhm @ 50A, 10V 4V @ 110µA 87nC @ 10V 5900pF @ 50V 10V ±20V