Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC066N06NSATMA1
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602
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Infineon Technologies MOSFET N-CH 60V 64A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 46W (Tc) N-Channel - 60V 64A (Tc) 6.6 mOhm @ 50A, 10V 3.3V @ 20µA 21nC @ 10V 1500pF @ 30V 6V, 10V ±20V
NVMFS5885NLT1G
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2,909
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ON Semiconductor MOSFET N-CH 60V 39A SO8FL - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 54W (Tc) N-Channel - 60V 10.2A (Ta) 15 mOhm @ 15A, 10V 2.5V @ 250µA 21nC @ 10V 1340pF @ 25V 4.5V, 10V ±20V
FDMS5362L-F085
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3,082
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ON Semiconductor MOSFET N-CH 60V 17.6A POWER56 Automotive, AEC-Q101, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN Power56 41.7W (Tc) N-Channel - 60V 17.6A (Tc) 33 mOhm @ 17.6A, 10V 3V @ 250µA 21nC @ 10V 878pF @ 25V 4.5V, 10V ±20V
BSZ068N06NSATMA1
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1,464
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Infineon Technologies MOSFET N-CH 60V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 46W (Tc) N-Channel - 60V 40A (Tc) 6.8 mOhm @ 20A, 10V 3.3V @ 20µA 21nC @ 10V 1500pF @ 30V 6V, 10V ±20V