Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMTH6009LPS-13
RFQ
VIEW
RFQ
3,508
In-stock
Diodes Incorporated MOSFET N-CH 60V POWERDI5060-8 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.8W (Ta), 136W (Tc) N-Channel - 60V 11.76A (Ta), 89.5A (Tc) 10 mOhm @ 20A, 10V 2V @ 250µA 15.6nC @ 4.5V 1925pF @ 30V 4.5V, 10V ±16V
BSZ100N03LSGATMA1
RFQ
VIEW
RFQ
2,233
In-stock
Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 30W (Tc) N-Channel - 30V 12A (Ta), 40A (Tc) 10 mOhm @ 20A, 10V 2.2V @ 250µA 17nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V
BSZ100N06NSATMA1
RFQ
VIEW
RFQ
3,434
In-stock
Infineon Technologies MOSFET N-CH 60V 40A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 36W (Tc) N-Channel - 60V 40A (Tc) 10 mOhm @ 20A, 10V 3.3V @ 14µA 15nC @ 10V 1075pF @ 30V 6V, 10V ±20V
DMT6009LPS-13
RFQ
VIEW
RFQ
3,746
In-stock
Diodes Incorporated MOSFET N-CHA 60V 10.6A POWERDI Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.3W (Ta) N-Channel - 60V 10.6A (Ta), 87A (Tc) 10 mOhm @ 20A, 10V 2V @ 250µA 33.5nC @ 10V 1925pF @ 30V 4.5V, 10V ±16V