- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,854
In-stock
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Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 125W (Tc) | N-Channel | - | 100V | 14.9A (Ta), 90A (Tc) | 6 mOhm @ 50A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4900pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
1,496
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 17.7A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 83W (Tc) | P-Channel | - | 30V | 17.7A (Ta), 100A (Tc) | 6 mOhm @ 50A, 10V | 3.1V @ 150µA | 81nC @ 10V | 6020pF @ 15V | 6V, 10V | ±25V |