- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,887
In-stock
|
Infineon Technologies | MOSFET N CH 100V 19A 8QFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | 100V | 19A (Ta) | 5.2 mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | 2320pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,122
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 25A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 2.8W (Ta), 37W (Tc) | N-Channel | 30V | 19A (Ta) | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,458
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 32A SO-8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 3.7W (Ta), 79W (Tc) | N-Channel | 60V | 19A (Ta) | 4.7 mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | 2164pF @ 25V | 4.5V, 10V | ±20V | |||
