Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFHM9331TR2PBF
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Infineon Technologies MOSFET P-CH 30V 11A 3X3 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (3x3) 2.8W (Ta) P-Channel - 30V 11A (Ta), 24A (Tc) 10 mOhm @ 11A, 20V 2.4V @ 25µA 48nC @ 10V 1543pF @ 25V 10V, 20V ±25V
IRFHM9331TRPBF
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VIEW
RFQ
2,538
In-stock
Infineon Technologies MOSFET P-CH 30V 11A 8-PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (3x3) 2.8W (Ta) P-Channel - 30V 11A (Ta), 24A (Tc) 10 mOhm @ 11A, 20V 2.4V @ 25µA 48nC @ 10V 1543pF @ 25V 10V, 20V ±25V