Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC070N10NS5ATMA1
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3,337
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Infineon Technologies MOSFET N-CH 100V 80A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 83W (Tc) N-Channel 100V 80A (Tc) 7 mOhm @ 40A, 10V 3.8V @ 50µA 38nC @ 10V 2700pF @ 50V 6V, 10V ±20V
FDMC610P
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2,580
In-stock
ON Semiconductor MOSFET P-CH 12V 80A POWER33 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN Power33 2.4W (Ta), 48W (Tc) P-Channel 12V 80A (Tc) 3.9 mOhm @ 22A, 4.5V 1V @ 250µA 99nC @ 4.5V 1250pF @ 6V 2.5V, 4.5V ±8V
TSM055N03PQ56 RLG
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RFQ
1,421
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 30V 80A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 74W (Tc) N-Channel 30V 80A (Tc) 5.5 mOhm @ 20A, 10V 2.5V @ 250µA 11.1nC @ 4.5V 1160pF @ 25V 4.5V, 10V ±20V
TSM055N03EPQ56 RLG
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RFQ
2,981
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 30V 80A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 74W (Tc) N-Channel 30V 80A (Tc) 5.5 mOhm @ 20A, 10V 2.5V @ 250µA 11.1nC @ 4.5V 1210pF @ 25V 4.5V, 10V ±20V