- Part Status :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,435
In-stock
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Infineon Technologies | MOSFET N-CH 30V 16A 8PQFN | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.7W (Ta), 33W (Tc) | N-Channel | - | 30V | 16A (Ta) | 6.6 mOhm @ 20A, 10V | 2.35V @ 25µA | 20nC @ 10V | 1450pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,928
In-stock
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Infineon Technologies | MOSFET N-CH 25V 16A 8PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 3W (Ta), 30W (Tc) | N-Channel | - | 25V | 16A (Ta) | 7.7 mOhm @ 20A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1040pF @ 10V | 4.5V, 10V | ±20V | |||
