- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,112
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 211A 8PQFN | PowerTrench®, SyncFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6), Power56 | 74W (Tc) | N-Channel | Schottky Diode (Body) | 30V | 211A (Tc) | 1.09 mOhm @ 38A, 10V | 3V @ 1mA | 65nC @ 4.5V | 10250pF @ 15V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
827
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 218A 8PQFN | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6), Power56 | 83W (Tc) | N-Channel | - | 30V | 218A (Tc) | 1.15 mOhm @ 40A, 10V | 2V @ 250µA | 63nC @ 4.5V | 9690pF @ 15V | 4.5V, 10V | ±16V | |||
|
VIEW |
1,026
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 71A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 45W (Tc) | N-Channel | - | 30V | 15A (Ta), 71A (Tc) | 5.7 mOhm @ 30A, 10V | 2V @ 250µA | 40nC @ 10V | 3100pF @ 15V | 4.5V, 10V | ±16V | |||
