Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDMS8672AS
RFQ
VIEW
RFQ
2,030
In-stock
ON Semiconductor MOSFET N-CH 30V 18A POWER56 PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 70W (Tc) N-Channel - 30V 18A (Ta), 28A (Tc) 5 mOhm @ 18A, 10V 3V @ 1mA 40nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
BSZ0901NSIATMA1
RFQ
VIEW
RFQ
2,039
In-stock
Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V
CSD17305Q5A
RFQ
VIEW
RFQ
1,918
In-stock
Texas Instruments MOSFET N-CH 30V 100A 8SON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.1W (Ta) N-Channel - 30V 29A (Ta), 100A (Tc) 3.4 mOhm @ 30A, 8V 1.6V @ 250µA 18.3nC @ 4.5V 2600pF @ 15V 3V, 8V +10V, -8V
BSC0901NSIATMA1
RFQ
VIEW
RFQ
1,539
In-stock
Infineon Technologies MOSFET N-CH 30V 28A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) N-Channel - 30V 28A (Ta), 100A (Tc) 2 mOhm @ 30A, 10V 2.2V @ 250µA 20nC @ 15V 2600pF @ 15V 4.5V, 10V ±20V