Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TSM061NA03CR RLG
RFQ
VIEW
RFQ
1,014
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 30V 88A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 78W (Tc) N-Channel 30V 88A (Tc) 6.1 mOhm @ 16A, 10V 2.5V @ 250µA 19nC @ 10V 1133pF @ 15V 4.5V, 10V ±20V
BSC079N03LSCGATMA1
RFQ
VIEW
RFQ
3,290
In-stock
Infineon Technologies MOSFET N-CH 30V 14A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 30W (Tc) N-Channel 30V 14A (Ta), 50A (Tc) 7.9 mOhm @ 30A, 10V 2.2V @ 250µA 19nC @ 10V 1600pF @ 15V 4.5V, 10V ±20V
TSM045NA03CR RLG
RFQ
VIEW
RFQ
865
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 30V 108A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 89W (Tc) N-Channel 30V 108A (Tc) 4.5 mOhm @ 18A, 10V 2.5V @ 250µA 19nC @ 10V 1194pF @ 15V 4.5V, 10V ±20V