Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFH8325TR2PBF
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3,017
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Infineon Technologies MOSFET N-CH 30V 17A 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 54W (Tc) N-Channel - 30V 21A (Ta), 82A (Tc) 5 mOhm @ 20A, 10V 2.35V @ 50µA 32nC @ 10V 2487pF @ 10V 4.5V, 10V ±20V
BSZ058N03MSGATMA1
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3,111
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 45W (Tc) N-Channel - 30V 14A (Ta), 40A (Tc) 5 mOhm @ 20A, 10V 2V @ 250µA 40nC @ 10V 3100pF @ 15V 4.5V, 10V ±20V
BSZ050N03LSGATMA1
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RFQ
2,524
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 50W (Tc) N-Channel - 30V 16A (Ta), 40A (Tc) 5 mOhm @ 20A, 10V 2.2V @ 250µA 35nC @ 10V 2800pF @ 15V 4.5V, 10V ±20V
IRFH8325TRPBF
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RFQ
2,413
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Infineon Technologies MOSFET N-CH 30V 82A 5X6 PQFN HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 54W (Tc) N-Channel - 30V 21A (Ta), 82A (Tc) 5 mOhm @ 20A, 10V 2.35V @ 50µA 32nC @ 10V 2487pF @ 10V 4.5V, 10V ±20V