- Series :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,539
In-stock
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Texas Instruments | MOSFET P-CH 20V 60A 8-SON | NexFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON-CLIP (3.3x3.3) | 2.8W (Ta) | P-Channel | - | 20V | 14A (Ta), 60A (Tc) | 11.7 mOhm @ 10A, 4.5V | 1.2V @ 250µA | 12.3nC @ 4.5V | 1400pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,002
In-stock
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Diodes Incorporated | MOSFET P-CH 20V POWERDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.3W (Ta) | P-Channel | - | 20V | 60A (Tc) | 2.5 mOhm @ 25A, 10V | 1.4V @ 250µA | 476nC @ 10V | 12826pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
1,661
In-stock
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Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,987
In-stock
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Diodes Incorporated | MOSFET P-CH 20V POWERDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.3W (Ta) | P-Channel | - | 20V | 60A (Tc) | 2.5 mOhm @ 25A, 10V | 1.4V @ 250µA | 476nC @ 10V | 12826pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
822
In-stock
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Diodes Incorporated | MOSFETP-CHAN 20V POWERDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.4W | P-Channel | - | 20V | 150A (Tc) | 2.2 mOhm @ 25A, 10V | 1.4V @ 250µA | 177nC @ 10V | 8352pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
2,566
In-stock
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Diodes Incorporated | MOSFET P-CH 20V POWERDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 2.3W (Ta) | P-Channel | - | 20V | 60A (Tc) | 1.9 mOhm @ 25A, 10V | 1.4V @ 250µA | 585nC @ 10V | 12826pF @ 10V | 2.5V, 10V | ±12V | |||
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VIEW |
3,874
In-stock
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Infineon Technologies | MOSFET N-CH 20V 28A PQFN 5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 52W (Tc) | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,187
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 20A POWERDI5060 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.5W (Ta) | N-Channel | - | 20V | 20A (Ta), 100A (Tc) | 4.6 mOhm @ 13.5A, 4.5V | 1.2V @ 250µA | 142nC @ 10V | 5337pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,045
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 10A POWERDI5060 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.1W (Ta) | N-Channel | - | 20V | 10A (Ta), 36A (Tc) | 12.5 mOhm @ 9.4A, 4.5V | 1.3V @ 250µA | 11.6nC @ 4.5V | 1091pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,748
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 78W (Tc) | N-Channel | - | 20V | 25A (Ta), 100A (Tc) | 2.6 mOhm @ 50A, 4.5V | 1.2V @ 200µA | 52.7nC @ 4.5V | 7800pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,088
In-stock
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Infineon Technologies | MOSFET N-CH 20V 80A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 48W (Tc) | N-Channel | - | 20V | 19A (Ta), 80A (Tc) | 4.6 mOhm @ 50A, 4.5V | 1.2V @ 110µA | 27.6nC @ 4.5V | 4100pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,488
In-stock
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Infineon Technologies | MOSFET N-CH 20V 26A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (3x3) | 2.7W (Ta), 37W (Tc) | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | |||
