Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor PT8P 40V LL PQFN56 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-DFN (5.1x6.3) 75W (Tj) P-Channel - 40V 50A (Tc) 13.5 mOhm @ 50A, 10V 3V @ 250µA 37nC @ 10V 2320pF @ 20V 4.5V, 10V ±16V
NVMFS5113PLT1G
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644
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ON Semiconductor MOSFET P-CH 60V 64A SO8FL - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 5-DFN (5x6) (8-SOFL) 3.8W (Ta), 150W (Tc) P-Channel - 60V 10A (Ta), 64A (Tc) 14 mOhm @ 17A, 10V 2.5V @ 250µA 83nC @ 10V 4400pF @ 25V 4.5V, 10V ±20V
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ON Semiconductor PMOS PWR56 40V 8 MOHM Automotive, AEC-Q101, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-DFN (5.1x6.3) 107W (Tj) P-Channel - 40V 65A (Tc) 8 mOhm @ 65A, 10V 3V @ 250µA 67nC @ 10V 3360pF @ 20V 4.5V, 10V ±16V
DMPH1006UPSQ-13
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2,072
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Diodes Incorporated MOSFET P-CH 12V 80A POWERDI5060 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 3.2W P-Channel - 12V 80A (Tc) 6 mOhm @ 15A, 4.5V 1V @ 250µA 124nC @ 8V 6334pF @ 10V 2.5V, 4.5V ±8V