Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFHM8235TRPBF
RFQ
VIEW
RFQ
2,928
In-stock
Infineon Technologies MOSFET N-CH 25V 16A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (3.3x3.3), Power33 3W (Ta), 30W (Tc) N-Channel 25V 16A (Ta) 7.7 mOhm @ 20A, 10V 2.35V @ 25µA 12nC @ 4.5V 1040pF @ 10V 4.5V, 10V ±20V
RS1E280BNTB
RFQ
VIEW
RFQ
3,278
In-stock
Rohm Semiconductor MOSFET N-CH 30V 28A 8HSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 30W (Tc) N-Channel 30V 28A (Ta) 2.3 mOhm @ 28A, 10V 2.5V @ 1mA 94nC @ 10V 5100pF @ 15V 4.5V, 10V ±20V
RS1E240BNTB
RFQ
VIEW
RFQ
3,390
In-stock
Rohm Semiconductor MOSFET N-CH 30V 24A 8HSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 30W (Tc) N-Channel 30V 24A (Ta) 3.2 mOhm @ 24A, 10V 2.5V @ 1mA 70nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V