Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM160P04LCRHRLG
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Taiwan Semiconductor Corporation MOSFET P-CH 40V 51A 8PDFN Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 69W (Tc) P-Channel - 40V 51A (Tc) 16 mOhm @ 10A, 10V 2.5V @ 250µA 48nC @ 10V 2712pF @ 20V 4.5V, 10V ±20V
DMTH6016LPSQ-13
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3,346
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Diodes Incorporated MOSFET N-CHA 60V 10.6A POWERDI Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.6W (Ta), 37.5W (Tc) N-Channel - 60V 9.8A (Ta), 37A (Tc) 16 mOhm @ 20A, 10V 2.5V @ 250µA 17nC @ 10V 864pF @ 30V 4.5V, 10V ±20V
DMTH6016LPS-13
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3,463
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Diodes Incorporated MOSFET N-CHA 60V 10.6A POWERDI Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 3W (Ta), 37.5W (Tc) N-Channel - 60V 10.6A (Ta), 37.1A (Tc) 16 mOhm @ 20A, 10V 2.5V @ 250µA 17nC @ 10V 864pF @ 30V 4.5V, 10V ±20V
DMTH43M8LPSQ-13
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3,135
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Diodes Incorporated MOSFETN-CH 40VPOWERDI5060-8 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.7W (Ta) N-Channel - 40V 22A (Ta), 100A (Tc) 3.3 mOhm @ 20A, 10V 2.5V @ 250µA 49nC @ 10V 3.367nF @ 20V 5V, 10V ±20V