- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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967
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CH 40V 51A 8PDFN | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | 69W (Tc) | P-Channel | - | 40V | 51A (Tc) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 48nC @ 10V | 2712pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
3,851
In-stock
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Diodes Incorporated | MOSFET P-CH 30V POWERDI5060-8 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.28W | P-Channel | - | 30V | 21A (Tc) | 28 mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | 1.372nF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,072
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 80A POWERDI5060 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 3.2W | P-Channel | - | 12V | 80A (Tc) | 6 mOhm @ 15A, 4.5V | 1V @ 250µA | 124nC @ 8V | 6334pF @ 10V | 2.5V, 4.5V | ±8V | |||
