Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
CSD17581Q5AT
RFQ
VIEW
RFQ
762
In-stock
Texas Instruments 30V N-CHANNEL NEXFET POWER MOSFE NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.1W (Ta), 83W (Tc) N-Channel - 30V 24A (Ta), 123A (Tc) 3.4 mOhm @ 16A, 10V 1.7V @ 250µA 54nC @ 10V 3640pF @ 15V 4.5V, 10V ±20V
CSD17302Q5A
RFQ
VIEW
RFQ
1,884
In-stock
Texas Instruments MOSFET N-CH 30V 87A 8SON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3W (Ta) N-Channel - 30V 16A (Ta), 87A (Tc) 7.9 mOhm @ 14A, 8V 1.7V @ 250µA 7nC @ 4.5V 950pF @ 15V 3V, 8V +10V, -8V
CSD16556Q5B
RFQ
VIEW
RFQ
2,096
In-stock
Texas Instruments MOSFET N-CH 25V 100A 8VSON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.2W (Ta), 191W (Tc) N-Channel - 25V 100A (Tc) 1.07 mOhm @ 30A, 10V 1.7V @ 250µA 47nC @ 4.5V 6180pF @ 15V 4.5V, 10V ±20V