Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD038N04NGBTMA1
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3,627
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Infineon Technologies MOSFET N-CH 40V 90A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 94W (Tc) N-Channel - 40V 90A (Tc) 3.8 mOhm @ 90A, 10V 4V @ 45µA 56nC @ 10V 4500pF @ 20V 10V ±20V
IRFR3410TRPBF
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RFQ
1,678
In-stock
Infineon Technologies MOSFET N-CH 100V 31A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 3W (Ta), 110W (Tc) N-Channel - 100V 31A (Tc) 39 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1690pF @ 25V 10V ±20V
SUD50N04-8M8P-4GE3
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RFQ
3,240
In-stock
Vishay Siliconix MOSFET N-CH 40V 14A TO-252 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 3.1W (Ta), 48.1W (Tc) N-Channel - 40V 14A (Ta), 50A (Tc) 8.8 mOhm @ 20A, 10V 3V @ 250µA 56nC @ 10V 2400pF @ 20V 4.5V, 10V ±20V
FDD6688
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2,501
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ON Semiconductor MOSFET N-CH 30V 84A D-PAK PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252) 83W (Ta) N-Channel - 30V 84A (Ta) 5 mOhm @ 18A, 10V 3V @ 250µA 56nC @ 10V 3845pF @ 15V 4.5V, 10V ±20V
IRFR3518TRPBF
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RFQ
3,149
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Infineon Technologies MOSFET N-CH 80V 38A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) N-Channel - 80V 38A (Tc) 29 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1710pF @ 25V 10V ±20V
IRFR3410TRLPBF
RFQ
VIEW
RFQ
1,553
In-stock
Infineon Technologies MOSFET N-CH 100V 31A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 3W (Ta), 110W (Tc) N-Channel - 100V 31A (Tc) 39 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1690pF @ 25V 10V ±20V