Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPD60R380C6
RFQ
VIEW
RFQ
2,141
In-stock
Infineon Technologies MOSFET N-CH 600V 10.6A TO252 CoolMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 83W (Tc) N-Channel - 600V 10.6A (Tc) 380 mOhm @ 3.8A, 10V 3.5V @ 320µA 32nC @ 10V 700pF @ 100V 10V ±20V
IPD65R420CFDBTMA1
RFQ
VIEW
RFQ
1,274
In-stock
Infineon Technologies MOSFET N-CH 650V 8.7A TO252 CoolMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 83.3W (Tc) N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V
SPD08N50C3BTMA1
RFQ
VIEW
RFQ
3,788
In-stock
Infineon Technologies MOSFET N-CH 560V 7.6A DPAK CoolMOS™ Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 83W (Tc) N-Channel - 560V 7.6A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 32nC @ 10V 750pF @ 25V 10V ±20V
IPD60R380C6ATMA1
RFQ
VIEW
RFQ
3,193
In-stock
Infineon Technologies MOSFET N-CH 600V 10.6A TO252 CoolMOS™ C6 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 83W (Tc) N-Channel - 600V 10.6A (Tc) 380 mOhm @ 3.8A, 10V 3.5V @ 320µA 32nC @ 10V 700pF @ 100V 10V ±20V