Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLH5034TR2PBF
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2,129
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Infineon Technologies MOSFET N-CH 40V 100A 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 156W (Tc) N-Channel - 40V 29A (Ta), 100A (Tc) 2.4 mOhm @ 50A, 10V 2.5V @ 150µA 82nC @ 10V 4730pF @ 25V 4.5V, 10V ±16V
FDS8670
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RFQ
3,808
In-stock
ON Semiconductor MOSFET N-CH 30V 21A 8-SOIC PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 21A (Ta) 3.7 mOhm @ 21A, 10V 3V @ 250µA 82nC @ 10V 4040pF @ 15V 4.5V, 10V ±20V
IPD053N06N3GBTMA1
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RFQ
2,982
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Infineon Technologies MOSFET N-CH 60V 90A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 115W (Tc) N-Channel - 60V 90A (Tc) 5.3 mOhm @ 90A, 10V 4V @ 58µA 82nC @ 10V 6600pF @ 30V 10V ±20V
TPC8035-H(TE12L,QM
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RFQ
2,471
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 18A SOP8 2-6J1B U-MOSVI-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 30V 18A (Ta) 3.2 mOhm @ 9A, 10V 2.3V @ 1mA 82nC @ 10V 7800pF @ 10V 4.5V, 10V ±20V