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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,983
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.2A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 20V | 5.2A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,455
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.6A UFM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4.6A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,014
In-stock
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Infineon Technologies | MOSFET N-CH 30V 12A PQFN33 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (3x3) | 2.8W (Ta) | N-Channel | - | 30V | 12A (Ta), 29A (Tc) | 12.4 mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | 755pF @ 15V | 4.5V, 10V | ±20V | |||
