- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,307
In-stock
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ON Semiconductor | MOSFET N-CH 400V 0.4A SOT223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | TO-261-4, TO-261AA | SOT-223 (TO-261) | 2W (Tc) | N-Channel | - | 400V | 400mA (Tc) | 5.5 Ohm @ 220mA, 10V | 2V @ 250µA | 5.5nC @ 10V | 121pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,773
In-stock
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ON Semiconductor | MOSFET N-CH 60V 3A SOT-223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.3W (Ta) | N-Channel | - | 60V | 3A (Ta) | 120 mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | 5V | ±15V | |||
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|
VIEW |
3,943
In-stock
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ON Semiconductor | MOSFET N-CH 60V 2A SOT223 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 (TO-261) | 1.3W (Ta) | N-Channel | - | 60V | 2A (Ta) | 175 mOhm @ 1A, 5V | 2V @ 250µA | 10nC @ 5V | 270pF @ 25V | 5V | ±15V | |||
|
VIEW |
3,562
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
