Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTTS2P02R2G
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2,423
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ON Semiconductor MOSFET P-CH 20V 2.4A 8MICRO - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 780mW (Ta) P-Channel 20V 2.4A (Ta) 90 mOhm @ 2.4A, 4.5V 1.4V @ 250µA 18nC @ 4.5V 550pF @ 16V 2.5V, 4.5V ±8V
NDC652P
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3,409
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ON Semiconductor MOSFET P-CH 30V 2.4A SSOT6 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) P-Channel 30V 2.4A (Ta) 110 mOhm @ 3.1A, 10V 3V @ 250µA 20nC @ 10V 290pF @ 15V 4.5V, 10V -20V
SSM3J306T(TE85L,F)
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RFQ
3,412
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 2.4A TSM - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel 30V 2.4A (Ta) 117 mOhm @ 1A, 10V - 2.5nC @ 15V 280pF @ 15V 4V, 10V ±20V