- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,807
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | |||
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VIEW |
2,089
In-stock
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Infineon Technologies | MOSFET N-CH 60V 86A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 60V | 86A (Tc) | 7 mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | 10V | ±20V | |||
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VIEW |
3,195
In-stock
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Infineon Technologies | MOSFET N-CH 60V 86A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 60V | 86A (Tc) | 7 mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | 10V | ±20V | |||
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VIEW |
2,451
In-stock
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Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V | |||
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VIEW |
2,961
In-stock
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Infineon Technologies | MOSFET N-CH 30V 4.6A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 30V | 4.6A (Ta) | 31 mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,575
In-stock
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Infineon Technologies | MOSFET N-CH 150V 10A 8VQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN | PQFN (5x6) Single Die | 3.6W (Ta), 156W (Tc) | N-Channel | - | 150V | 10A (Ta), 56A (Tc) | 31 mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | 2300pF @ 50V | 10V | ±20V | |||
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VIEW |
2,958
In-stock
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Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V |