- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,193
In-stock
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Infineon Technologies | MOSFET N-CH 55V 17A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | N-Channel | - | 55V | 17A (Tc) | 70 mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | 10V | ±20V | |||
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3,377
In-stock
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Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 55V | 30A (Tc) | 13 mOhm @ 30A, 10V | 4V @ 250µA | 93nC @ 10V | 2030pF @ 25V | 10V | ±20V | |||
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2,682
In-stock
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Infineon Technologies | MOSFET N-CH 55V 16A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 35W (Tc) | N-Channel | - | 55V | 16A (Tc) | 58 mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
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1,131
In-stock
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Infineon Technologies | MOSFET N-CH 55V 150A D2PAK-7 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK | 230W (Tc) | N-Channel | - | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 10V | ±20V | |||
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942
In-stock
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Infineon Technologies | MOSFET P-CH 55V 18A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 57W (Tc) | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | |||
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3,317
In-stock
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Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | 4.5V, 10V | ±16V | |||
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3,562
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
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2,287
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
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VIEW |
2,579
In-stock
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Infineon Technologies | MOSFET N CH 55V 16A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 35W (Tc) | N-Channel | - | 55V | 16A (Tc) | 58 mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
