- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,547
In-stock
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ON Semiconductor | MOSFET P-CH 200V 7.3A D2PAK | Automotive, AEC-Q101, QFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.13W (Ta), 90W (Tc) | P-Channel | 200V | 7.3A (Tc) | 690 mOhm @ 3.65A, 10V | 5V @ 250µA | 25nC @ 10V | 770pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,049
In-stock
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Rohm Semiconductor | MOSFET N-CH 200V 3A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | 200V | 3A (Tc) | 870 mOhm @ 1.5A, 10V | 5.2V @ 1mA | 6.7nC @ 10V | 270pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,878
In-stock
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Rohm Semiconductor | MOSFET N-CH 200V 5A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 20W (Tc) | N-Channel | 200V | 5A (Ta) | 720 mOhm @ 2.5A, 10V | 4V @ 1mA | 9.3nC @ 10V | 292pF @ 10V | 10V | ±30V | |||
