Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI8413DB-T1-E1
RFQ
VIEW
RFQ
1,007
In-stock
Vishay Siliconix MOSFET P-CH 20V 4.8A 2X2 4-MFP TrenchFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-XFBGA, CSPBGA 4-Microfoot 1.47W (Ta) P-Channel 20V 4.8A (Ta) 48 mOhm @ 1A, 4.5V 1.4V @ 250µA 21nC @ 4.5V - 2.5V, 4.5V ±12V
SIE808DF-T1-E3
RFQ
VIEW
RFQ
710
In-stock
Vishay Siliconix MOSFET N-CH 20V 60A 10-POLARPAK TrenchFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (L) 10-PolarPAK® (L) 5.2W (Ta), 125W (Tc) N-Channel 20V 60A (Tc) 1.6 mOhm @ 25A, 10V 3V @ 250µA 155nC @ 10V 8800pF @ 10V 4.5V, 10V ±20V
SI3469DV-T1-GE3
RFQ
VIEW
RFQ
3,944
In-stock
Vishay Siliconix MOSFET P-CH 20V 5A 6-TSOP TrenchFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.14W (Ta) P-Channel 20V 5A (Ta) 30 mOhm @ 6.7A, 10V 3V @ 250µA 30nC @ 10V - 4.5V, 10V ±20V