- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,962
In-stock
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Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,826
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 2.9A X2DFN1006-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1006-3 | 1.13W | P-Channel | 20V | 2.9A (Ta) | 88 mOhm @ 500mA, 8V | 1.2V @ 250µA | 1.5nC @ 4.5V | 160pF @ 10V | 1.8V, 8V | -12V | |||
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VIEW |
707
In-stock
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Texas Instruments | MOSFET N-CH 12V 3PICOSTAR | FemtoFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | N-Channel | 12V | 2.9A (Ta) | 44 mOhm @ 500mA, 4.5V | 1.25V @ 250µA | 2.6nC @ 4.5V | 291pF @ 6V | 2.5V, 4.5V | ±10V | |||
|
VIEW |
1,598
In-stock
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Texas Instruments | MOSFET N-CH 12V 3PICOSTAR | FemtoFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-PICOSTAR | 500mW (Ta) | N-Channel | 12V | 2.9A (Ta) | 44 mOhm @ 500mA, 4.5V | 1.25V @ 250µA | 2.6nC @ 4.5V | 291pF @ 6V | 2.5V, 4.5V | ±10V | |||
|
VIEW |
2,685
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 2.9A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | 100V | 2.9A (Ta) | 125 mOhm @ 2.9A, 10V | 4V @ 250µA | 17nC @ 10V | 859pF @ 50V | 10V | ±20V | |||
|
VIEW |
831
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET P-CH 20V 2.9A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3L | 1W (Ta) | P-Channel | 20V | 2.9A (Ta) | 70 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 745pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,276
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | N-Channel | 30V | 2.9A (Ta) | 50 mOhm @ 3.4A, 10V | 800mV @ 250µA (Min) | 7nC @ 10V | 215pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,870
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 2.9A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1W (Ta) | N-Channel | 30V | 2.9A (Ta) | 80 mOhm @ 3.1A, 4.5V | 700mV @ 250µA | 6.7nC @ 4.5V | 568pF @ 15V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,920
In-stock
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Diodes Incorporated | MOSFET P-CH 40V 2.9A SOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 1.1W (Ta) | P-Channel | 40V | 2.9A (Ta) | 80 mOhm @ 4A, 10V | 3V @ 250µA | 15.8nC @ 10V | 833pF @ 20V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,014
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V DFN1010D-3G | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 20V | 2.9A (Ta) | 85 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 608pF @ 10V | 1.2V, 4.5V | ±8V | |||
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|
VIEW |
3,099
In-stock
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Micro Commercial Co | P-CHANNEL MOSFET, SOT-23 PACKAGE | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 350mW (Ta) | P-Channel | 20V | 2.9A (Ta) | 110 mOhm @ 2.2A, 10V | 900mV @ 250µA | 13nC @ 4.5V | 715pF @ 6V | 4.5V | ±12V | |||
