- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,178
In-stock
|
Rohm Semiconductor | 2.5V DRIVE PCH MOSFET (CORRESPON | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-SMD, Flat Leads | TUMT6 | 1W (Ta) | P-Channel | - | 20V | 2A (Ta) | 135 mOhm @ 2A, 4.5V | 2V @ 1mA | 4.9nC @ 4.5V | 430pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
798
In-stock
|
Rohm Semiconductor | MOSFET P-CH 20V 2A TSMT5 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSMT5 | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2A (Ta) | 125 mOhm @ 2A, 4.5V | 2V @ 1mA | 4.8nC @ 4.5V | 450pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,303
In-stock
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | π-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 800mW (Ta) | N-Channel | - | 60V | 2A (Ta) | 300 mOhm @ 1A, 10V | 2V @ 1mA | 6nC @ 10V | 150pF @ 10V | 3.3V, 10V | ±20V | |||
|
VIEW |
2,569
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2A SOT23 | π-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 60V | 2A (Ta) | 300 mOhm @ 1A, 10V | 2V @ 1mA | - | 150pF @ 10V | 3.3V, 10V | ±20V | |||
|
VIEW |
1,067
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 2A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 60V | 2A (Ta) | 300 mOhm @ 1A, 10V | 2V @ 1mA | 8.3nC @ 10V | 330pF @ 10V | 4V, 10V | +10V, -20V | |||
