- Manufacture :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
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- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,540
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 2A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | P-Channel | - | 12V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
2,822
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 2A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 320mW (Ta) | N-Channel | - | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | 1.5V, 4.5V | ±10V | |||
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VIEW |
2,252
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 2A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | - | 12V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | 1.5V, 4.5V | ±10V | |||
|
VIEW |
3,661
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 2A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 540mW (Ta) | N-Channel | - | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
3,296
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 2A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | P-Channel | - | 12V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | 1.5V, 4.5V | ±10V | |||
|
VIEW |
2,079
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
