- Manufacture :
- Technology :
- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,225
In-stock
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Microchip Technology | MOSFET P-CH 6V 2A SC70-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | 270mW (Ta) | P-Channel | 6V | 2A (Ta) | 84 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | - | 1.8V, 4.5V | 6V | |||
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|
VIEW |
3,068
In-stock
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Microchip Technology | MOSFET P-CH 6V 2A SC70-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 | 270mW (Ta) | P-Channel | 6V | 2A (Ta) | 84 mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | - | 1.8V, 4.5V | 6V | |||
|
VIEW |
2,870
In-stock
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EPC | TRANS GAN 65V 2.7A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 65V | 2A (Ta) | 530 mOhm @ 500mA, 5V | 2.5V @ 250µA | - | 21pF @ 32.5V | 5V | +6V, -4V | |||
